Multi Sensor Metrology for Wafer Measurement

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Multi Sensor Metrology for Wafer Measurement Multi Sensor Metrology for Wafer Measurement FRT, Fries Research & Technology GmbH Dr. Thomas Fries Multi Sensor Metrology for Wafer Measurement
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Multi Sensor Metrology for Wafer Measurement Multi Sensor Metrology for Wafer Measurement FRT, Fries Research & Technology GmbH Dr. Thomas Fries Multi Sensor Metrology for Wafer Measurement Multi Sensor Metrology for Wafer Measurement Multi Sensor Metrology for Wafer Measurement Automotive LED / Semicon / Micro Electronics Solar MEMS / Nano Optics Multi Sensor Metrology for Wafer Measurement SEMI Compliant TTV Measurement MicroProf 300 Multisensor metrology tool with 300 mm x 300 mm stage and optional protective housing for production environments FRT MFE - Metrology for Frontend Fully automated multisensor metrology tool with 300 mm 300 mm stage, sensor setup for wafer thickness measurement (TTV), class 1 housing, EFEM, SECS/GEM MicroProf 300 TTV MHU Multisensor metrology tool with 300 mm x 300 mm stage, sensor setup for wafer thickness measurement (TTV), optional housing and automated wafer handling FRT offers various sensors giving 4 basic combination options: multisensor configuration FRT multi sensor setup: FRT multi sensor setup: Chromatic point sensor: step height optical measurement, fast and contactless intensity and wavelength I down to 3 nm vertical resolution 1-2 µm lateral resolution 2 or 4 khz measuring frequency 300 µm - 25 mm z-measuring range λ λ 400nm 540nm 680 nm blue green red 400nm 540nm 680 nm blue green red Thin film sensors: Measuring head Film thickness d, refractive index n Spectrometer with diode array: + high spectral resolution + large measurement range + no moving parts + fast + maintenance free + long lifetime FoV sensors: Data: + Michelson interferometer + 55 mm x 55 mm range + 55 µm lateral resolution + z-resolution 5 nm + image frequency 10 to 30 se Material handling unit: Automated MEMS metrology: Automated wafer metrology for 2 to 8 Recipe driven Semi compliant software SECS/GEM interface Front end EFEM: Bridge tool for automated wafer metrology for 8 to 12 Mini Environment Multi Sensor Metrology tool Recipe driven Semi compliant software SECS/GEM interface EC-funded project SEAL SP12 - WISDoMP White-light interferometer system for the development of 300 mm wafer mechanical processes on the nanometre scale Roughness, topography, profile: Wafer metrology: Polished side Rough side Wafer Ra / µm (polished side) Ra / µm (rough side) 1 0,037 0, ,049 0, ,033 0, ,056 0, ,039 0, ,033 0, ,030 0, ,046 0, ,029 0, ,044 0,371 Roughness evaluation of quartz wafers Wafer Bow / µm Warp / µm Average TTV / µm TIR / µm LTV / µm PLTV / % thickness / µm 1-7,50 65,30 496,70 3,89 3,28 1,16 97,5 2 5,51 59,53 505,90 5,15 4,09 1,24 95,8 3 7,98 62,57 498,41 3,30 2,91 0,95 100,0 4 6,91 58,83 500,34 4,64 3,48 1,10 98,3 5-0,29 58,52 499,60 6,42 2,81 1,44 93,2 6 6,58 64,19 500,96 6,82 3,66 1,25 89,8 7 0,52 63,33 500,46 6,26 2,33 1,18 95,8 8 5,28 62,03 499,50 3,76 2,73 1,39 95,8 9 8,92 58,45 499,20 5,33 4,66 1,23 92,5 10-5,46 59,27 497,92 4,26 3,76 1,17 94,2 Bow, Warp Thickness and Flatness evaluation Wafer metrology: Dual probe set up Fully Semi compliant Material independent (sapphire, glass, Si,..) Recipe driven Semi compliant software MF1390 MF657 MF534 MF1530 Value Warp Warp, TTV Bow Flatness, Thickness, TTV Methode 2-probe 2-probe 1-probe 2-probe Flip wafer Yes, wafer inversion method Fixture By mutual agreement No Yes No 3-point reference plane 3-point By mutual agreement Overview over relevant Semi standards Wafer metrology: SEAL SP12 WISDoMP (EC-funded project) White-light interferometer system for the development of 300 mm wafer mechanical processes on the nanometre scale: Target of this project is the development of a metrology system to apply white-light interferometry to assess the full surface topography of 300 mm wafers after mechanical processes at a spatial resolution below 150 µm. Such high resolution enables assessment of surface nanotopography as well. The metrology system will allow for identification and characterization of defects on Silicon wafers at such early stages of manufacturing. Implementation of a filter following SEMI M78: Results for Stitching and Nanotopography (NT) Analysis: Stitched image of an entire wafer Interfaces between the single measurements are marked in red color All around 3DIC metrology: Thinned Wafers TTV, Bow, Warp etc. Vias High-aspect ratio TSV Step Height Conducting Paths, Bumps Method A (CWL) B (CWL IR) C (New Development) Via Diameter min. 20 µm 30 µm 3 µm Via Depth max. 100 µm 100 µm 300 µm Aspect Ratio 1:5 1:5 1:40 Sensor Type Point Point FOV Substrate Material opaque/transparent transparent in IR opaque/transparent
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